SK Hynix begins mass production of 321-layer QLC NAND flash memory and plans to enter the AI data center market next year
SK Hynix announced that it has developed and begun mass production of a 321-layer, 2Tb (Terabit) QLC NAND flash memory product. The product is scheduled to enter the AI data center market in the first half of next year. The company plans to initially deploy the 321-layer NAND flash memory in PC solid-state drives (SSDs), and then gradually expand to enterprise-class SSDs (eSSDs) for data centers and embedded storage (UFS) for smartphones. Furthermore, the company will utilize packaging technology that stacks 32 NAND chips, achieving double the integration density of existing technology, to enter the ultra-high-capacity eSSD market for AI servers.